Draw the circuit arrangement for studying the VI characteristics of a p-n junction diode in reverse bias. Plot the V-I characteristics in this case.

Development of P-N Junction:- At the instant of the PN junction formation, free electrons near the junction diffuse across the junction into the P-Junction and combine with holes ⇒ filling a hole makes a -ve ion and leaves behind a +ve ion on the N-side. These two layers of the +ve and -ve charges form the depletion region as the regions near the junction is depleted of charge carriers. As e- diffuse across the junction, a point is reached where the -ve charges repel further diffusion ⇒ potential barrier is formed.