Explain how a potential barrier is developed in a p-n junction diode.

Barrier Potential: The electric field formed in the depletion region acts as a barrier. External energy must be applied to get the electrons to move across the barrier of the electric field. The potential difference required to move the electrons through the electric field is called the barrier potential. Barrier potential of a P-N junction depends on the type of semiconductor material, amount of doping and temperature. This is approximately 0.7V for silicon and 0.3 V for germanium.