The mobility of electrons in a semiconductor is defined as the ratio of their drift velocity to the applied electric field. If, for an n-type semiconductor, the density of electrons is 1019 m-3 and their mobility is 1.6 m2/(V.s), then the resistivity of the semiconductor (since it is an n-type semiconductor, the contribution of holes is ignored) is close to:
0.4Ωm
2Ωm
0.2Ωm
4Ωm
Solution:
The correct option is B 0.4Ωm j = σε = nevd σ = nevd/E = neμ ρ = 1/σ = 1/(neμ) ρ = 1/(1019 × 1.6 × 1.6 × 10-19) = 0.4Ωm